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Advanced optical materials: help high performance intelligent wearable devices - ultra fast response flexible photodetectors based on three or five groups of nanowire arrays

wallpapers News 2020-09-08

flexible electronic devices have many unique device characteristics that traditional electronics can not achieve show great potential in the fields of flexible solar cells wearable diagnostic systems stretchable electronic skin flexible photoelectric detectors. Among these new device concepts flexible photodetectors are crucial for future production life such as the construction of skin medical diagnosis artificial vision system biologic signal monitoring. These applications are believed to eventually change our lifestyle improve our quality of life. Compared with traditional thin film materials

low dimensional nanomaterials especially one-dimensional nanostructured materials have excellent optoelectronic properties mechanical flexibility have been widely used as device channels to construct flexible photodetectors. In addition to flexibility one-dimensional nanowire materials also have excellent specific surface area ratio which helps to enhance the separation extraction of photogenerated carriers when they are used to construct photodetectors. Therefore three or five group compound semiconductor nanowires with high carrier mobility suitable direct b gap are ideal semiconductor materials for the next generation of high-performance electronic devices optoelectronic devices energy harvesting devices. So far researchers have conducted in-depth research on photodetectors based on three or five group nanowires but most of these photodetectors are built on rigid substrates. It is worth noting that there are few researches on flexible photodetectors based on three or five group nanowires especially the infrared photodetectors working in the optical communication b (1260-1625 nm) with low loss data transmission.

the research team of he Songxian City University of Hong Kong used new ingasb nanowires with high crystallinity to prepare large-scale uniform parallel array nanodevices on flexible substrates realized photodetectors with ultra fast response speed high mechanical flexibility at room temperature for near-infrared optical communication b. It is reported that the in0.28ga0.72sb nanowires have the best photoresponse properties due to the suitable direct b gap enhanced optical absorption coefficient. Using contact printing method ingasb nanowires are transferred to polyimide substrate to form a high-density well aligned parallel array which is further processed into a flexible near-infrared photodetector. Under the irradiation of 1550 nm light the in0.28ga0.72sb nanowire photodetectors show excellent room temperature light response characteristics. The responsivity is as high as 1520 A / W the response speed is less than 20 μ s. These photoelectric detection parameters break the records of all flexible near-infrared photodetectors. More importantly the in0.28ga0.72sb nanowire flexible device shows strong mechanical stability in the bending test. After 700 bending cycles only 7 %All these results show that ingasb nanowire arrays have great application potential in the next generation of high-performance flexible optoelectronic devices broad prospects in the field of wearable electronic devices.

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